Device modelling of archimedean spiral graphene nanoscroll field-effect-transistor
For the past decades, researchers indicate that persistent scaling of conventional silicon Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) reaching its physical limit at 10nm, resulted in its performance degradation as the search continues for a low-power and high speed, density and relia...
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| Format: | Thesis |
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2014-03.
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| Online Access: | Get fulltext |