Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET
The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT and MOSFET models considered agree well with the trends in the available experimental data. The results obtained...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Springer,
2012-08.
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| Subjects: | |
| Online Access: | Get fulltext |