SnS thin films prepared by encapsulated sulfurization

Tin sulphide (SnS) thin films were grown using a method called encapsulated sulfurization from the Sn/S stacked layers previously coated on a glass substrate at pressure 10-5 mbar and film thickness ratios; Sn: S= 1:1, 1:2, 1:3. In this technique the samples were placed in a carbon block and anneale...

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Bibliographic Details
Main Authors: Sakrani, Samsudi (Author), D. Hutagalung, Sabar (Author), Wahab, Yusof (Author), Moin, Mastura (Author)
Format: Article
Language:English
Published: Persatuan Sains & Teknologi Keadaan Pepejal Malaysia, 1996.
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