Design, fabrication and characterization of capacitively coupled gallium arsenide-based interdigitalgated plasma devices
In the recent years, solid-state terahertz (THz) devices to fill the so-called "THz" gap have become a hot topic. Since the transit-time effect is so severe in this frequency range for conventional devices, one possibility is to utilize traveling wave interaction in semiconductor plasma. T...
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| Format: | Thesis |
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2010-04.
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| Online Access: | Get fulltext |