Current and conductance modulation at elevated temperature in silicon and InAs-based spin field-effect transistors
Spin field-effect transistors (SpinFETs) are promising candidates for future integrated microelectronic circuits. A SpinFET is composed of two ferromagnetic contacts (source and drain), which sandwich a semiconductor channel. Current modulation is achieved by electrically tuning the gate voltage dep...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Universiti Kebangsaan Malaysia,
2013-02.
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| Online Access: | Get fulltext |