Feasibility study of GaN-based MEMS capacitive microphone using finite element method
Gallium nitride (GaN) is an excellent choice of semiconductor material due to its optoelectronic, mechanical and wide bandgap properties which are highly demanded by high-power and radio-frequency (RF) electronics but also widely employed for the fabrication of Light Emitting Diode (LED). In this pa...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Penerbit Universiti Kebangsaan Malaysia,
2020-02.
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| Online Access: | Get fulltext |