Graphene growth at low temperatures using RF-plasma enhanced chemical vapour deposition
The advantage of plasma enhanced chemical vapour deposition (PECVD) method is the ability to deposit thin films at relatively low temperature. Plasma power supports the growth process by decomposing hydrocarbon to carbon radicals which will be deposited later on metal catalyst. In this work, we have...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Penerbit Universiti Kebangsaan Malaysia,
2017-07.
|
| Online Access: | Get fulltext |