Modeling of "strain technology" on 140nm CMOS devices / Ahmad Sabirin Zoolfakar, Noor Irmahani Mohmad Tahiruddin and Lyly Nyl Ismail
A 140nm Complementary Metal Oxide Semiconductor (CMOS) was designed and simulated to investigate stress effects on device performance. Stress can be divided into two categories which are compressive and tensile stress. Strain technology is capable to introduce stress to the CMOS devices. The strain...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
UiTM Press,
2009-06.
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| Subjects: | |
| Online Access: | Get fulltext View Fulltext in UiTM IR |