Performance of high-k dielectric material for short channel length MOSFET simulated using silvaco TCAD tools / Fatin Antasha Anizam ... [et al.]
Short channel effect (SCE) occur in the MOSFET devices when the oxide layer became thinner, and the gate length become shorter. The purposed of this study is to find a new dielectric and gate material to replace the conventional oxide which is silicon dioxide (SiO2) and polysilicon as gate material....
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Universiti Teknologi MARA,
2021-10.
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| Subjects: | |
| Online Access: | Get fulltext View Fulltext in UiTM IR |