Emerging CMOS Compatible Magnetic Memories and Logic

Emerging CMOS Compatible Magnetic Memories and Logic

As scaling of the feature size - the main driving force behind an outstanding increase of the performance of modern electronic circuits - displays signs of saturation, the main focus of engineering research in microelectronics shifts towards finding new paradigms. Any future solution must be scalabl...

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Bibliographic Details
Main Authors: Johannes Ender, Simone Fiorentini, Roberto L. De Orio, Wolfgang Goes, Viktor Sverdlov, Siegfried Selberherr
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Digital spintronics
spin-transfer torque (STT)
spin-orbit torque (SOT)
magnetoresistive random access memory (MRAM)
in-memory computing
reinforcement learning (RL)
Online Access:https://ieeexplore.ieee.org/document/9380657/

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https://ieeexplore.ieee.org/document/9380657/

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