Stability and band offsets between GaAs semiconductor and CeO2 gate dielectric
Cerium oxide (CeO2) appears to be a promising candidate high-k dielectric material in GaAs-based metal-oxide-semiconductor field-effect transistors. The electronic properties of GaAs/CeO2 (001) heterojunctions are investigated by density functional theory. We determine the GaAs/CeO2 heterostructure...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5049391 |