Evaluating the impact of thermal annealing on c-Si/Al2O3 interface: Correlating electronic properties to infrared absorption
Al2O3 is the standard for the passivation of p-type PERC (Passivated Emitter Rear Contact) solar cells. It is well established that the thin interfacial silicon oxide layer in between Al2O3 and c-Si plays a key role in its surface passivation mechanism. In this work, we investigate the interface pro...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-07-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5036738 |