A High Efficiency RF Power Amplifier Using Linearity-Enhanced Method in 40nm Standard CMOS Process
A two-stage RF CMOS power amplifier with high linearity for WLAN is presented in this paper.The proposed PA consists of a programmable gain amplifier and a high power stage which is composed of a main amplifier with class AB bias and an auxiliary amplifier with class C bias. To improve the linearity...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2017-01-01
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| Series: | MATEC Web of Conferences |
| Online Access: | https://doi.org/10.1051/matecconf/201713900086 |