A New High-Gain Operational Amplifier Using Transconductance-Enhancement Topology Integrated With Metal Oxide TFTs
This paper presents an integrated operational amplifier (OPAMP) consisting of only n-type metal oxide thin-film transistors. In addition to using positive feedback in the input differential pair, a transconductance-enhancement topology is applied to improve the gain of the OPAMP. The OPAMP has a vol...
Main Authors: | , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2019-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/8546747/ |