Temperature dependent electrical characterisation of Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes

Temperature dependent electrical characterisation of Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes

This paper reports an improvement in Pt/n-GaN metal-semiconductor (MS) Schottky diode characteristics by the introduction of a layer of HfO2 (5 nm) between the metal and semiconductor interface. The resulting Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diode showed an increase in rect...

Full description

Bibliographic Details
Main Authors: Arjun Shetty, Basanta Roul, Shruti Mukundan, Lokesh Mohan, Greeshma Chandan, K. J. Vinoy, S. B. Krupanidhi
Format: Article
Language:English
Published: AIP Publishing LLC 2015-09-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4930199

Internet

http://dx.doi.org/10.1063/1.4930199

Similar Items