Screening of 193i and EUV lithography process options for STT-MRAM orthogonal array MTJ pillars
Spin-transfer torque magnetic random-access memory (STT-MRAM) is considered as the most promising candidate to replace the complementary metal-oxide-semiconductor (CMOS) based memories that are dominating the market in the last few decades. What makes STT-MRAM superior to other memories is the high...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2021-04-01
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| Series: | Micro and Nano Engineering |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590007221000034 |