Digital and Analog Switching Characteristics of InGaZnO Memristor Depending on Top Electrode Material for Neuromorphic System

In this study, we demonstrate both of digital and analog memory operations in InGaZnO (IGZO) memristor devices by controlling the electrode materials for neuromorphic application. The switching properties of the devices are determined by the initial energy barrier characteristics between the metal e...

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Bibliographic Details
Main Authors: Jun Tae Jang, Jungi Min, Yeongjin Hwang, Sung-Jin Choi, Dong Myong Kim, Hyungjin Kim, Dae Hwan Kim
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Access
Subjects:
Online Access:https://ieeexplore.ieee.org/document/9229402/