Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure

Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure

Abstract Ferroelectric field effect transistor (FeFET) emerges as an intriguing non-volatile memory technology due to its promising operating speed and endurance. However, flipping the polarization requires a high voltage compared with that of reading, impinging the power consumption of writing a ce...

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Bibliographic Details
Main Authors: Siqing Zhang, Yan Liu, Jiuren Zhou, Meng Ma, Anyuan Gao, Binjie Zheng, Lingfei Li, Xin Su, Genquan Han, Jincheng Zhang, Yi Shi, Xiaomu Wang, Yue Hao
Format: Article
Language:English
Published: SpringerOpen 2020-08-01
Series:Nanoscale Research Letters
Subjects:
Nonvolatile memory
Ferroelectric
MoS2
2D
Field-effect transistor
HZO
Online Access:http://link.springer.com/article/10.1186/s11671-020-03384-z

Internet

http://link.springer.com/article/10.1186/s11671-020-03384-z

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