Dimension Effect on Breakdown Voltage of Partial SOI LDMOS

Dimension Effect on Breakdown Voltage of Partial SOI LDMOS

Dimension effect on breakdown voltage (BV) of lateral double-diffused metal-oxide- semiconductor field-effect transistor in partial silicon-on-insulator (PSOI) technology is comprehensively studied. The maximum BV (BV<sub>max</sub>) is examined under various settings of the device length...

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Bibliographic Details
Main Authors: Yue Hu, Huazhen Liu, Qianqian Xu, Luwen Wang, Jing Wang, Shichang Chen, Peng Zhao, Ying Wang, Gaofeng Wang
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
LDMOS
partial silicon-on-insulator (PSOI)
breakdown voltage
on-resistance
Online Access:https://ieeexplore.ieee.org/document/7892003/

Internet

https://ieeexplore.ieee.org/document/7892003/

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