Epitaxial Growth and Stoichiometry Control of Ultrawide Bandgap ZnGa<sub>2</sub>O<sub>4</sub> Films by Pulsed Laser Deposition
ZnGa<sub>2</sub>O<sub>4</sub> is a promising semiconductor for developing high-performance deep-ultraviolet photodetectors owing to a number of advantageous fundamental characteristics. However, Zn volatilization during the ZnGa<sub>2</sub>O<sub>4</sub>...
Main Authors: | , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-06-01
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Series: | Coatings |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-6412/11/7/782 |