Investigation of etching optimization in capacitively coupled SF6–O2 plasma
The selective etching process is widely used for achieving the desired etch rate in semiconductor fabrication. Parameters such as input power, operating pressure, gas mixture, chamber geometry, and amplitude of the radio-frequency voltage govern the etch rate and etch quality in plasma. In this work...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5066286 |