On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film

On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film

Internet-of-Things (IoT) technologies require a new energy-efficient transistor which operates at ultralow voltage and ultralow power for sensor node devices employing energy-harvesting techniques as power supply. In this paper, a practical device design guideline for low voltage operation of steep-...

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Bibliographic Details
Main Authors:	Masaharu Kobayashi, Toshiro Hiramoto
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2016-02-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.4942427

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