(Ga,In)N/GaN light emitting diodes with a tunnel junction and a rough n-contact layer grown by metalorganic chemical vapor deposition
Tunnel junctions (TJs) are envisaged as potential solutions to improve the electrical injection efficiency of nitride emitters in the visible as well as in the UV range. Indeed TJs would solve the issues related to the poor contact with the top p type nitride layer, replacing it by an n type one. Bu...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5092693 |