TECHNOLOGIES FOR HETEROSTRUCTURES FORMATION OF TRANSDUCER

• Main Authors: P. G. Mikhaylov, V. V. Smogunov, M. I. Vol'nikov
• Format: Article
• Language: English
• Published: Penza State University Publishing House 2020-10-01
• Series: Известия высших учебных заведений. Поволжский регион:Технические науки
• Subjects: heterology; technology; silicon; polysilicon; structure; heterogeneity; transducer; sensitive element; high temperature; microelectronic

Background. The relevance of the work is due to the high heterogeneity of the elements and structures of modern microelectronic converters of physical quantities, designed to operate in a wide range of temperatures and radiation. The goal of the research is development of technologies for the formation of heterogeneous elements and structures of high-temperature transducers. Materials and methods. Heterology, solid state physics and microsystem technology are used as methods and research tools. Results. Heterology of the technology for the formation of semiconductor 3D structures based on doped polycrystalline silicon has been developed. Conclusion. Based on the analysis of experimental results of the formation of piezoresistors made of polycrystalline silicon, factors affecting the electrophysical characteristics of sensor elements are determined.