In Situ Metrology for Pad Surface Monitoring in CMP Using a Common-Path Phase-Shifting Interferometry: A Feasibility Study

In the fabrication of semiconductors, chemical mechanical polishing (CMP) is an essential wafer-planarization process. For optimal CMP, it is crucial to monitor the texture of the polishing pad; this leads to homogenous planarization of wafers. Hence, we present a new interferometric approach for in...

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Bibliographic Details
Main Authors: Eun-Soo Kim, Woo-June Choi
Format: Article
Language:English
Published: MDPI AG 2021-07-01
Series:Applied Sciences
Subjects:
Online Access:https://www.mdpi.com/2076-3417/11/15/6839