Peculiarities of Temperature Dependence of Detected Voltage by GaAs/Al0.25Ga0.75As Heterojunction Microwave Diode Near Interwalley Crossover

Peculiarities of Temperature Dependence of Detected Voltage by GaAs/Al0.25Ga0.75As Heterojunction Microwave Diode Near Interwalley Crossover

In this paper we reveal electrical detection properties of planar MBE grown GaAs/Al<sub>0.25</sub>Ga<sub>0.75</sub>As heterojunction diode at different ambient temperatures. These investigations enabled to reveal the reasons of voltage signal rise across the heterojunction di...

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Bibliographic Details
Main Authors: Algirdas SUŽIEDĖLIS, Steponas AŠMONTAS, Jonas GRADAUSKAS, Viktorija NARGELIENĖ, Aurimas ČERŠKUS, Andžej LUČUN, Tomas ANBINDERIS, Irina PAPSUJEVA, Aleksandras NARKŪNAS, Benas KUNDROTAS, Roma RINKEVIČIENĖ
Format: Article
Language:English
Published: Kaunas University of Technology 2014-06-01
Series:Medžiagotyra
Subjects:
semiconductor heterojunction
microwave diode
microwave detection
temperature dependence
Online Access:http://matsc.ktu.lt/index.php/MatSc/article/view/6319

Internet

http://matsc.ktu.lt/index.php/MatSc/article/view/6319

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