Effect of post-implantation annealing on Al–N isoelectronic trap formation in silicon: Al–N pair formation and defect recovery mechanisms
The effect of post-implantation annealing (PIA) on Al–N isoelectronic trap (IET) formation in silicon has been experimentally investigated to discuss the Al–N IET formation and implantation-induced defect recovery mechanisms. We performed a photoluminescence study, which indicated that self-intersti...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5030795 |