Effect of impurities on the Raman scattering of 6H-SiC crystals

Raman spectroscopy was applied to different-impurities-doped 6H-SiC crystals. It had been found that the first-order Raman spectra of N-, Al- and B-doped 6H-SiC were shifted to higher frequency when comparing with undoped samples. However, the first-order Raman spectra of V-doped sample was shifted...

Full description

Bibliographic Details
Main Authors: Shenghuang Lin, Zhiming Chen, Lianbi Li, Chen Yang
Format: Article
Language:English
Published: Associação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol) 2012-12-01
Series:Materials Research
Subjects:
Online Access:http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392012000600003