Revealing the intrinsic nature of the mid-gap defects in amorphous Ge2Sb2Te5

The structural origin of the mid-gap states responsible for the time-dependent resistance drift in phase-change materials is still under debate. Here the authors use machine learning and density functional theory to identify the structural motifs of the mid-gap defects in the prototypical Ge2Sb2Te5...

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Bibliographic Details
Main Authors: Konstantinos Konstantinou, Felix C. Mocanu, Tae-Hoon Lee, Stephen R. Elliott
Format: Article
Language:English
Published: Nature Publishing Group 2019-07-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-019-10980-w