Machine-Learning-Based Read Reference Voltage Estimation for NAND Flash Memory Systems Without Knowledge of Retention Time

Machine-Learning-Based Read Reference Voltage Estimation for NAND Flash Memory Systems Without Knowledge of Retention Time

To achieve a low error rate of NAND flash memory, reliable reference voltages should be updated based on the accurate knowledge of program/erase (P/E) cycles and retention time, because those severely distort the threshold voltage distribution of memory cell. Due to the sensitivity to the temperatur...

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Bibliographic Details
Main Authors: Hyemin Choe, Jeongju Jee, Seung-Chan Lim, Sung Min Joe, Il Han Park, Hyuncheol Park
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Access
Subjects:
NAND flash memory
read reference voltage estimation
machine learning
dimension reduction
Online Access:https://ieeexplore.ieee.org/document/9205258/

Internet

https://ieeexplore.ieee.org/document/9205258/

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