A New SiC Planar-Gate IGBT for Injection Enhancement Effect and Low Oxide Field

A New SiC Planar-Gate IGBT for Injection Enhancement Effect and Low Oxide Field

A new silicon carbide (SiC) planar-gate insulated-gate bipolar transistor (IGBT) is proposed and comprehensively investigated in this paper. Compared to the traditional SiC planar-gate IGBT, the new IGBT boasts a much stronger injection enhancement effect, which leads to a low on-state voltage (<...

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Bibliographic Details
Main Authors: Meng Zhang, Baikui Li, Zheyang Zheng, Xi Tang, Jin Wei
Format: Article
Language:English
Published: MDPI AG 2021-12-01
Series:Energies
Subjects:
SiC planar-gate IGBT
injection enhancement effect
embedded trench p-MOSFET
carrier storage layer
<i>E</i><sub>OFF</sub>-<i>V</i><sub>ON</sub> trade-off
Online Access:https://www.mdpi.com/1996-1073/14/1/82

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https://www.mdpi.com/1996-1073/14/1/82

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