Thermal induced carrier’s transfer in bimodal size distribution InAs/GaAs quantum dots

This work reports on the investigation of the thermal induced carriers’ transfer mechanism in vertically stacked bimodal size distribution InAs/GaAs quantum dots (QD). A model treating the QD as a localized states ensemble (LSE) has been employed to fit the atypical temperature dependence of the pho...

Full description

Bibliographic Details
Main Authors: B. Ilahi, K. Alshehri, N.A. Madhar, L. Sfaxi, H. Maaref
Format: Article
Language:English
Published: Elsevier 2018-06-01
Series:Results in Physics
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379718301293