Photoelectric absorption cross section of silicon near the bandgap from room temperature to sub-Kelvin temperature

The use of cryogenic silicon as a detector medium for dark matter searches is gaining popularity. Many of these searches are highly dependent on the value of the photoelectric absorption cross section of silicon at low temperatures, particularly near the silicon bandgap energy, where the searches ar...

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Main Authors:	C. Stanford, M. J. Wilson, B. Cabrera, M. Diamond, N. A. Kurinsky, R. A. Moffatt, F. Ponce, B. von Krosigk, B. A. Young
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2021-02-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/5.0038392

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spelling	doaj-f425fb5772dd4398ac434bee411f6ada2021-03-02T21:48:04ZengAIP Publishing LLCAIP Advances2158-32262021-02-01112025120025120-610.1063/5.0038392Photoelectric absorption cross section of silicon near the bandgap from room temperature to sub-Kelvin temperatureC. Stanford0M. J. Wilson1B. Cabrera2M. Diamond3N. A. Kurinsky4R. A. Moffatt5F. Ponce6B. von Krosigk7B. A. Young8Department of Physics, Stanford University, Stanford, California 94305, USADepartment of Physics, University of Toronto, Toronto, Ontario M5S 1A7, CanadaDepartment of Physics, Stanford University, Stanford, California 94305, USADepartment of Physics, University of Toronto, Toronto, Ontario M5S 1A7, CanadaFermi National Accelerator Laboratory, Center for Particle Astrophysics, Batavia, Illinois 60510, USADepartment of Physics, Stanford University, Stanford, California 94305, USADepartment of Physics, Stanford University, Stanford, California 94305, USAInstitut für Experimentalphysik, Universität Hamburg, 22761 Hamburg, GermanyDepartment of Physics, Santa Clara University, Santa Clara, California 95053, USAThe use of cryogenic silicon as a detector medium for dark matter searches is gaining popularity. Many of these searches are highly dependent on the value of the photoelectric absorption cross section of silicon at low temperatures, particularly near the silicon bandgap energy, where the searches are most sensitive to low mass dark matter candidates. While such cross section data have been lacking from the literature, previous dark matter search experiments have attempted to estimate this parameter by extrapolating it from higher temperature data. However, discrepancies in the high temperature data have led to order-of-magnitude differences in the extrapolations. In this paper, we resolve these discrepancies by using a novel technique to make a direct, low temperature measurement of the photoelectric absorption cross section of silicon at energies near the bandgap (1.2 eV–2.8 eV).http://dx.doi.org/10.1063/5.0038392
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	C. Stanford M. J. Wilson B. Cabrera M. Diamond N. A. Kurinsky R. A. Moffatt F. Ponce B. von Krosigk B. A. Young
spellingShingle	C. Stanford M. J. Wilson B. Cabrera M. Diamond N. A. Kurinsky R. A. Moffatt F. Ponce B. von Krosigk B. A. Young Photoelectric absorption cross section of silicon near the bandgap from room temperature to sub-Kelvin temperature AIP Advances
author_facet	C. Stanford M. J. Wilson B. Cabrera M. Diamond N. A. Kurinsky R. A. Moffatt F. Ponce B. von Krosigk B. A. Young
author_sort	C. Stanford
title	Photoelectric absorption cross section of silicon near the bandgap from room temperature to sub-Kelvin temperature
title_short	Photoelectric absorption cross section of silicon near the bandgap from room temperature to sub-Kelvin temperature
title_full	Photoelectric absorption cross section of silicon near the bandgap from room temperature to sub-Kelvin temperature
title_fullStr	Photoelectric absorption cross section of silicon near the bandgap from room temperature to sub-Kelvin temperature
title_full_unstemmed	Photoelectric absorption cross section of silicon near the bandgap from room temperature to sub-Kelvin temperature
title_sort	photoelectric absorption cross section of silicon near the bandgap from room temperature to sub-kelvin temperature
publisher	AIP Publishing LLC
series	AIP Advances
issn	2158-3226
publishDate	2021-02-01
description	The use of cryogenic silicon as a detector medium for dark matter searches is gaining popularity. Many of these searches are highly dependent on the value of the photoelectric absorption cross section of silicon at low temperatures, particularly near the silicon bandgap energy, where the searches are most sensitive to low mass dark matter candidates. While such cross section data have been lacking from the literature, previous dark matter search experiments have attempted to estimate this parameter by extrapolating it from higher temperature data. However, discrepancies in the high temperature data have led to order-of-magnitude differences in the extrapolations. In this paper, we resolve these discrepancies by using a novel technique to make a direct, low temperature measurement of the photoelectric absorption cross section of silicon at energies near the bandgap (1.2 eV–2.8 eV).
url	http://dx.doi.org/10.1063/5.0038392
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Photoelectric absorption cross section of silicon near the bandgap from room temperature to sub-Kelvin temperature

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