Photoelectric absorption cross section of silicon near the bandgap from room temperature to sub-Kelvin temperature
The use of cryogenic silicon as a detector medium for dark matter searches is gaining popularity. Many of these searches are highly dependent on the value of the photoelectric absorption cross section of silicon at low temperatures, particularly near the silicon bandgap energy, where the searches ar...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0038392 |