Growth and Characterization of CuO Nanostructures on Si for the Fabrication of CuO/p-Si Schottky Diodes

CuO interlayers in the CuO/p-Si Schottky diodes were fabricated by using CBD and sol-gel methods. Deposited CuO layers were characterized by SEM and XRD techniques. From the SEM images, it was seen that the film grown by CBD method is denser than the film grown by sol-gel method. This result is comp...

Full description

Bibliographic Details
Main Authors: S. Çetinkaya, H. A. Çetinkara, F. Bayansal, S. Kahraman
Format: Article
Language:English
Published: Hindawi Limited 2013-01-01
Series:The Scientific World Journal
Online Access:http://dx.doi.org/10.1155/2013/126982