Origin of layer decoupling in ordered multilayer graphene grown by high-temperature sublimation on C-face 4H-SiC

Origin of layer decoupling in ordered multilayer graphene grown by high-temperature sublimation on C-face 4H-SiC

We study the origin of layer decoupling in ordered multilayer graphene grown by high temperature sublimation on C-face 4H-SiC. The mid-infrared optical Hall effect technique is used to determine the magnetic field dependence of the inter-Landau level transition energies and their optical polarizatio...

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Bibliographic Details
Main Authors: Ingemar Persson, Nerijus Armakavicius, Chamseddine Bouhafs, Vallery Stanishev, Philipp Kühne, Tino Hofmann, Mathias Schubert, Johanna Rosen, Rositsa Yakimova, Per O. Å. Persson, Vanya Darakchieva
Format: Article
Language:English
Published: AIP Publishing LLC 2020-01-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.5134862

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http://dx.doi.org/10.1063/1.5134862

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