Theoretical Studies on InGaAs/InAlAs SAGCM Avalanche Photodiodes

Theoretical Studies on InGaAs/InAlAs SAGCM Avalanche Photodiodes

Abstract In this paper, we provide a detailed insight on InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodiodes (SAGCM APDs) and a theoretical model of APDs is built. Through theoretical analysis and two-dimensional (2D) simulation, the influence of charge layer...

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Bibliographic Details
Main Authors: Siyu Cao, Yue Zhao, Sajid ur Rehman, Shuai Feng, Yuhua Zuo, Chuanbo Li, Lichun Zhang, Buwen Cheng, Qiming Wang
Format: Article
Language:English
Published: SpringerOpen 2018-05-01
Series:Nanoscale Research Letters
Subjects:
Avalanche photodiodes
Theoretical analysis
Simulation
Charge layer
Tunneling effect
Online Access:http://link.springer.com/article/10.1186/s11671-018-2559-5

Internet

http://link.springer.com/article/10.1186/s11671-018-2559-5

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