The role of oxygen vacancies in the high cycling endurance and quantum conductance in BiVO4‐based resistive switching memory
Abstract Resistive random access memory (RRAM) has emerged as a new discipline promoting the development of new materials and devices toward a broad range of electronic and energy applications. Here, we realized a memristive device with weak dependence on the top electrodes and demonstrated the quan...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2020-09-01
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| Series: | InfoMat |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/inf2.12085 |