Recent progress of oxide-TFT-based inverter technology
Oxide semiconductor-based thin-film transistor (oxide-TFT) technology have gained significant attention since the innovation of n-channel oxide-TFT using ZnO and amorphous In–Ga–Zn–O (a-IGZO) channels because of their superior device properties including excellent electrical property such as high TF...
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| Format: | Article |
| Language: | English |
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Taylor & Francis Group
2021-09-01
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| Series: | Journal of Information Display |
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| Online Access: | http://dx.doi.org/10.1080/15980316.2021.1977401 |