Germanium epitaxy on silicon
With the rapid development of on-chip optical interconnects and optical computing in the past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic integration have attracted wide attention. Due to its narrow pseudo-direct gap behavior and compatibility with Si technology...
Main Authors: | Hui Ye, Jinzhong Yu |
---|---|
Format: | Article |
Language: | English |
Published: |
Taylor & Francis Group
2014-03-01
|
Series: | Science and Technology of Advanced Materials |
Online Access: | http://dx.doi.org/10.1088/1468-6996/15/2/024601 |
Similar Items
-
Silicon/Germanium Molecular Beam Epitaxy
by: Ericsson, Leif
Published: (2006) -
Epitaxial Growth of Germanium on Silicon for Light Emitters
by: Chengzhao Chen, et al.
Published: (2012-01-01) -
Low Temperature Growth and Fabrication of Silicon-based Epitaxial Germanium Films and Silicon-based Epitaxial Germanium Buffer Gallium Arsenide Films
by: HUNG-CHI HSIEH, et al.
Published: (2015) -
Low Temperature Growth of Silicon-based Epitaxial Heavy Boron-doped Germanium Films and Silicon-based Epitaxial Intrinsic Germanium Films.
by: Li, Ming-jie, et al.
Published: (2016) -
Development of Silicon-based Epitaxial Germanium Films and Photodetectors.
by: Wei-chi Chen, et al.
Published: (2015)