Germanium epitaxy on silicon

With the rapid development of on-chip optical interconnects and optical computing in the past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic integration have attracted wide attention. Due to its narrow pseudo-direct gap behavior and compatibility with Si technology...

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Bibliographic Details
Main Authors: Hui Ye, Jinzhong Yu
Format: Article
Language:English
Published: Taylor & Francis Group 2014-03-01
Series:Science and Technology of Advanced Materials
Online Access:http://dx.doi.org/10.1088/1468-6996/15/2/024601