Increasing the Carrier Injection Efficiency of GaN-Based Ultraviolet Light-Emitting Diodes by Double Al Composition Gradient Last Quantum Barrier and p-Type Hole Supply Layer
A 365 nm AlxGa1-xN-based ultraviolet light-emitting diodes (LEDs) with double Al composition gradient last quantum barrier and hole supply layer structure has been studied. Experimental results show that the proposed structure enhances the carrier injection efficiency and suppresses the overflow of...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
|
| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9353194/ |