Analog Switching and Artificial Synaptic Behavior of Ag/SiO x :Ag/TiO x /p++-Si Memristor Device

Analog Switching and Artificial Synaptic Behavior of Ag/SiO x :Ag/TiO x /p++-Si Memristor Device

Abstract In this study, by inserting a buffer layer of TiO x between the SiO x :Ag layer and the bottom electrode, we have developed a memristor device with a simple structure of Ag/SiO x :Ag/TiO x /p++-Si by a physical vapor deposition process, in which the filament growth and rupture can be effici...

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Bibliographic Details
Main Authors: Nasir Ilyas, Dongyang Li, Chunmei Li, Xiangdong Jiang, Yadong Jiang, Wei Li
Format: Article
Language:English
Published: SpringerOpen 2020-01-01
Series:Nanoscale Research Letters
Subjects:
Analog switching
Synaptic characteristics
Ag/SiO x :Ag/TiO x /p++-Si memristor
Ag-filament
Online Access:https://doi.org/10.1186/s11671-020-3249-7

Internet

https://doi.org/10.1186/s11671-020-3249-7

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