Passivation of Poly-Si Thin Film Employing Si Self-Implantation and Its Application to TFTs
Silicon self-implantation technique is applied to passivate the defects in the grain boundaries of the polycrystalline silicon (poly-Si) thin film. The implantation of Si with low dose is a precise technique of introducing Si interstitials in the poly-Si thin film. Thin film transistors fabricated o...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2018-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8267190/ |