Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth

Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth

<p>Abstract</p> <p>Good-quality (11&#8722;22) semipolar GaN sample was obtained using epitaxial lateral overgrowth. The growth conditions were chosen to enhance the growth rate along the [0001] inclined direction. Thus, the coalescence boundaries stop the propagation of basal s...

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Bibliographic Details
Main Authors: Kriouche N, Leroux M, Venn&#233;gu&#232;s P, Nemoz M, Nataf G, de Mierry P
Format: Article
Language:English
Published: SpringerOpen 2010-01-01
Series:Nanoscale Research Letters
Subjects:
Semipolar GaN
Epitaxial lateral overgrowth
TEM
Photoluminescence
Polarization
Online Access:http://dx.doi.org/10.1007/s11671-010-9724-9

Internet

http://dx.doi.org/10.1007/s11671-010-9724-9

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