Impact of deposition parameters on the material quality of SPC poly-Si thin films using high-rate PECVD of a-Si:H
The impact of the deposition parameters such as gas flow (sccm) and RF plasma power density (W/cm2) on the deposition rate of a-Si:H films is systematically investigated. A high deposition rate of up to 146 nm/min at 13.56 MHz is achieved for the a-Si:H films deposited with high lateral uniformity o...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2015-01-01
|
| Series: | EPJ Photovoltaics |
| Online Access: | http://dx.doi.org/10.1051/epjpv/2015004 |