Influence of strain on band structure of semiconductor nanostructures
The influence of the mechanical strain on the electronic structure of the asymmetric (In,Ga)As/GaAs quantum well is considered. Both the direct influence of strain on the orbital part of the electronic structure and an indirect influence through the strain dependent Rashba and Dresselhaus Hamiltonia...
Main Authors: | , |
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Format: | Article |
Language: | English |
Published: |
Faculty of Technical Sciences in Cacak
2009-01-01
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Series: | Serbian Journal of Electrical Engineering |
Subjects: | |
Online Access: | http://www.doiserbia.nb.rs/img/doi/1451-4869/2009/1451-48690903461R.pdf |