Influence of strain on band structure of semiconductor nanostructures

The influence of the mechanical strain on the electronic structure of the asymmetric (In,Ga)As/GaAs quantum well is considered. Both the direct influence of strain on the orbital part of the electronic structure and an indirect influence through the strain dependent Rashba and Dresselhaus Hamiltonia...

Full description

Bibliographic Details
Main Authors: Raičević Nevena, Tadić Milan
Format: Article
Language:English
Published: Faculty of Technical Sciences in Cacak 2009-01-01
Series:Serbian Journal of Electrical Engineering
Subjects:
Online Access:http://www.doiserbia.nb.rs/img/doi/1451-4869/2009/1451-48690903461R.pdf