Efficient Atomistic Simulation of Heterostructure Field-Effect Transistors

Efficient Atomistic Simulation of Heterostructure Field-Effect Transistors

In this paper, atomistic-level quantum mechanical simulations are performed for nanoscale field-effect transistors (FETs) with lateral or vertical heterojunction, within the non-equilibrium Green's function formalism. For efficient simulation of such heterostructure FETs, a novel approach is de...

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Bibliographic Details
Main Authors: Yongsoo Ahn, Mincheol Shin
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Heterostructure field-effect transistors
quantum transport
non-equilibrium Green’s function
recursive Green’s function
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Online Access:https://ieeexplore.ieee.org/document/8747471/

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