Ultrafast time-resolved extreme ultraviolet (XUV) photoelectron spectroscopy of hole transfer in a Zn/n-GaP Schottky junction
The addition of a metal overlayer to a semiconductor photocatalyst is a frequently used synthetic route to passivate the surface and, via the formation of a Schottky barrier, to enhance catalytic activity of the photocatalyst material. While it is known that Schottky junctions decrease recombination...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC and ACA
2018-09-01
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| Series: | Structural Dynamics |
| Online Access: | http://dx.doi.org/10.1063/1.5046776 |