High-Performance Microring Resonator Ge-on-Si Photodetectors by Optimizing Absorption Layer Length
We studied the relationship between the absorption layer length and the performance of Ge-on-Si microring resonator photodetectors. The principle of optimizing the absorption layer length based on the light field distribution was proposed. In the Ge-on-Si photodetectors, the transmission light field...
Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2020-01-01
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Series: | IEEE Photonics Journal |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/9145626/ |